A new high density data storage device is underway

11 November 2009

There are continuous efforts to enhance the data storage devices by researchers across the globe and in continuation, Bao Yu Zong and co-workers are a step closer to it. Researchers at Data Storage Institute, Singapore have modified the existing technology by which data storage device is created by depositing resist material onto a substrate.

Researchers found that when the existing resist material is mixed with metallic nanoparticles, the new material becomes semi-metallic and its resolution is much higher in comparison to the existing material. For mixing the metallic nanoparticles uniformly onto the surface of resist material, researchers used a chemical technique. They took chemically similar nanoparticles as that of resist material and found that metallic nanoparticles with both hydrophilic and hydrophobic molecules gets individually attracted towards the resist molecules and distributes evenly.

The commercial electron beams are used for patterning resists and the technique is suitable for many types of electron beam resists available commercially. With the semimetallic approach using metallic nanoparticles, researchers were able to pattern in the range of 5-50 nanometer and even researchers were successfully able to demonstrate that the complex pattern as required in nanosensors can be made using the technique.

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