Graphene base storage device projected as the next generation storage device
23 November 2008Researchers at Rice University have found that a graphene having size smaller than 10 nm can be used as basic element for memory devices. This research will lead to a massive storage devices for various applications including computers, cell phones, cameras etc.
Utilizing the conducting properties of graphene, James Tour, professor at Rice University and his students find out many advantages of graphene based memory devices over the conventional flash memory being used today. Today’s state of the art flash memory device uses 45 nm circuits and by replacing it with a 10 nm graphene based device, the amount of storage will increase by five times.
The advantage of graphene based chip is that it is practically possible to make three dimensional devices as graphene can easily be stacked and therefore making a massive storage device from it. Further being a mechanical device, graphene based chips will consume virtually no power and it is the biggest advantage of these chips.
Researchers in their lab has tested graphene from –75 to +200 degree Centigrade and observed no significant difference and therefore graphene based memory devices can be used also in hot processors and further there is no significant affect of radiation suggesting that these can also be used in extreme environment.
Researchers are now working on suitable manufacturing techniques so that it can be manufactured in the laboratory and at commercial scale. Researchers are working on various options including chemical vapor deposition of graphene on another substrate.
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