New generation storage device developed

29 October 2008

Researchers from Germany and Italy have developed a new generation molecular storage device that works on nanostructured storage domain. The lead researchers are from National Research Council, Bologna (Italy) and Forschungszentrum Karlsruhe, Germany and the research report findings were published in the Journal Angewandte Chemie.

Researchers were able to produce new nano patterns of spin transition compound on silicon oxide chips and by using un-conventional techniques, the researchers were able to produce neutral iron (II) oxide on a silicon wafer. Presently the computer hard-drive storage device uses the magnetic technique on rotating surface and these storage data can be accessed through storage cell address directly. If we decrease the domain of these conventional storages, there is a chance that these can loose the information on magnetization.

Using switchable materials that can flip between various spin-states, we can increase the storage density. Iron (II) compounds can also exits in high or low – spin states and the flipping between two spin states can be controlled by changing pressure, temperature and other parameters.

Researchers have already made enough progressso far and the study of switching properties at room temperature is at advance stage, however the researchers were able to transfer the storage from a CD onto a film on the iron (II) compound taken for the study.

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