V-shape Transistors for probing of the interiors of the cell

14 August 2010

A new device as described in the journal Science, has been developed by the scientists and engineers at the Harvard University. The new device is a V-shaped transistor made up off nanowire that is even smaller than many viruses can suitably be used for sensitive probing inside the cell. At present much bulkier probes, which are nearly as large as cell and therefore the chances of damaging the cell using the newly developed transistors are much lower.

The newly made device is known as nanoscale field effect transistors or nanoEFT, which is the first new electrical measurement technique used for measuring the intracellular activities. Researchers are hopeful to measure ion- flux and electrical signals and neurons using nanoEFT technique.

The research team led by Charles M. Leiber when coated  the structure by phospholipid bilayer , the same material cell membrane are made of, found that the nanoEFT devices are easily pulled into cell via membrane fusion. The nanoEFT  probes are therefore can easily be inserted and removed from the cell and therefore not at all traumatic as the existing electrical probes are.

The nanoEFT probe being being in the range of 50 nanometer is much smaller than the human cells which range from 10 to 50 microns. The current electrical probes are of the order of 5 microns and while inserting these probes to human cells, can cause the damage to the cell as well as are much traumatic also.

Lieber and his coworkers also introduced 120 degree joints in the nanowire. The two 120 degree angles in cis orientation perfectly create a V-shape, 60 degree angle nanoEFT with sensor at the tip of V. Now joining the two open ends of the nanoEFt can be connected to form a nanoscale transistor.

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