World’s smallest SRAM memory cell built
1 November 2008IBM and its joint development partners have made a breakthrough by developing the world’s smallest static random access memory (SRAM) built at the CNSE of University of Albany, New York. IBM and its partners including AMD, Freescale, Toshiba, STMicroelectronics have done a lot of work on semiconductor area at the CNSE, at the University of Albany, State University of New York.
IBM and its partners are already working on the continued development of miniaturization in microelectronics. They are already working on 32 nm high-K metal gate technology and have developed first SRAM cell for a 22 nm technology node.
There is a continuous focus on making SRM chip dense so that the size of the chip is reduced. This can be achieved by shrinking basic building block. IBM and their partners used high-NA immersion technology for obtaining the better result at their state of the art 300 nm research facility at Albany, New York.
The details of the research finding will be published at the international conference IEDM (IEEE International electron Devices) to be held at San Francisco, CA during December 15-17, 2008.
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I found this post fascinating. I’m a “newbie” to nanotech &
plan to give a lecture on diagnostic applications of nanotech at the TN American Society for Clinical Laboratory Sciences in April. I’ve got Quest’s excellent film on the topic, as our group is primarily interested in the application of nanotech to diagnosis and treatment of disease states (particularly microbiology, virology, etc.). If any of you folks out there can give me some good information, I’d really appreciate it. Thanks, Linda
I’m a “newbie” to nanotech, but find it fascinating. I’m going to introduce it to the TN Society for Clinical Lab. Sciences in April at our meeting. I have Quest’s excellent film on the topic, but would appreciate it if you “nanofolks” could send me some good references, esp. re diagnostic/biodefense applications. Thanks, Linda