Artificial graphene engineered by researchers at NEST

20 July 2009

Researchers at NEST laboratory in Pisa, Italy have created first artificial graphene. The NEST laboratory is attached to Italian Institute for Physics of Matter and scientists here with the help of other colleagues from different part of the world have sculpted it on the surface of a semiconductor, which is made up off gallium-arsenide. They found that it shows the properties to similar that of graphene and they named it “artificial graphene”.

This created artificial graphene is found to have similar electronic qualities as the original graphene, which was discovered in the year 2004. The original graphene have peculiar structure and here a single layer of carbon atoms, one atom thick forms a grid and that’s why it shows very different electronic properties and these properties of graphene could be used for replacing silicon by it.

The main drawback of the natural graphene is that so far it’s production as required by semiconductor industry is not yet feasible due to the exact size that is needed by the industry. Researchers thought at Pisa that if they could overcome the problem by creating a matter similar to natural graphene and carried out in the direction.

Researchers not only from NEST of INFM-CNR, but from various other institutes such as University of Missouri, Columbia University and Alcatel-Lucent’s Bell Labs also participated in the study. With this invention, if this commercialized, we can hope that silicon based semiconductors could be replaced by engineered artificial graphene.

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