Nano-Needles : Future LED’s and LED Laser
24 April 2008Silicon is the preferred choice for making semiconductors, however it has a disadvantage that it can not be used especially where light signals are also required alongwith electronic signals. In opto-electronics, gallium-arsenide (Ga As) is the preferred choice as it emits light and used for making light emitting diodes (LED’s) and light emitting diode (LED) lasers.
First time in a lab a gallium-arsenide (Ga As) defect free nanostructure has been fabricated, which will further used for creating lasers. Researchers at the University of California, Berkley have grown these gallium-arsenide narrow needle shape structures of 3 to 4 micron long. Once electrically pumped, these needles will emit light with high brightness.
Michael Moewe and his team expects that these needles will not only find their use in optoelectronic devices such as LED and LED lasers but will also be used in other applications including atomic force microscopy (AFM) and Raman Spectroscop. The reseach finding will be presented at Lasers and Electro Optics/Quantum Electronics and Laser Science Conference (CLEO/QELS) during May 4-9, 2008 at San Jose McEnergy Convention Centre in San Jose California.
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